| 申请日期 | 2025-07-12 | 申请号 | US12819534 |
| 公开（公告）号 | US20100319764A1 | 公开（公告）日 | 2010-12-23 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Michael W Wiemer; Homan B Yuen; Vijit A Sabnis; Michael J Sheldon; Ilya Fushman | ||
| 简介 | Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure. Such tunnel junctions survive thermal energy conditions (time/temperature) in the range required for dilute nitride material integration into III-V multi-junction solar cells. | ||
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