| 简介 |
PURPOSE : A method for processing substrates and a method for manufacturing a semiconductor device using the same are provided to prevent an oxide film from reducing by adjusting the entire work function of a gate insulating film. CONSTITUTION : A spin chuck(1) supports one semiconductor wafer(W) in a horizontal state. A processing solution nozzle(2) supplies a processing solution to the surface of the semiconductor wafer. A part of an oxide film containing either of rear earth oxide or alkaline earth oxide in the semiconductor wafer is exposed. The rear earth oxide contains at least one selected from a group including a lanthanum oxide, a scandium oxide, and a dysprosium oxide. The alkaline earth oxide contains at least one selected from a group including a magnesium oxide, a barium oxide, and a strontium oxide. |
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