客服热线:18202992950

SEMICONDUCTOR LIGHT-EMITTING DEVICE 发明授权

2023-05-20 4720 254K 0

专利信息

申请日期 2025-07-12 申请号 RU2009136789
公开(公告)号 RU2407109C1 公开(公告)日 2010-12-20
公开国别 RU 申请人省市代码 全国
申请人 Uchrezhdenie Rossijskoj akademii nauk Institut fiziki mikrostruktur RAN
简介 FIELD : physics. SUBSTANCE : according to the invention, the device has a substrate, active p- and n-type conduction layers between which there is a rare-earth element-doped emitting zone, including at least two emitting zones separated by extra p- and n-type conduction layers. The active layers and each of the extra layers are heavily doped. The device can be easily integrated into specific opto- and microelectronic circuits, including silicon-based circuits. EFFECT : high output power of the light-emitting device based on semiconductor materials, doped with impurities of rare-earth elements, with provision for high stability of output parametres at room temperature owing to formation of an inbuilt electric field in the working area of the device with new distribution configuration along the semiconductor structure. 7 cl, 4 dwg


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4