| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method for a semiconductor device capable of preventing a resist mask from falling down by plasma treatment.
SOLUTION : The manufacturing method for the semiconductor device includes a process for plasma-treating a sample having the mask of an organic material, the plasma treatment includes a first process for plasma-treating the sample with gas containing one of fluorine, oxygen and nitrogen, or all thereof, and a second process for plasma-treating the sample with gas not containing one of fluorine, oxygen and nitrogen, and containing a rare gas, and the first process and the second process are repeated in the manufacturing method for the semiconductor device.
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