| 简介 |
PROBLEM TO BE SOLVED : To provide a high electron mobility transistor (HFET) which exhibits more effective containment of charge carriers by preventing charge carrier migration out of a semiconductor active region.
SOLUTION : The HEMT 200A includes a first group III-V intrinsic layer 209a doped with a rare earth additive and also includes a second group III-V intrinsic layer 210a formed over the intrinsic layer 209a and a group III-V semiconductor layer 220 formed over this second group III-V intrinsic layer. A method for fabricating the HEMT includes forming the first group III-V intrinsic layer 209a and doping the first group III-V intrinsic layer with the rare earth additive to produce an insulator layer. The method also includes forming the second group III-V intrinsic layer 210a over the insulator layer and forming the group III-V semiconductor layer 220 over the second group III-V intrinsic layer. A two-dimensional electron gas (2DEG) 212 is formed at a heterojunction interface of the group III-V semiconductor layer and the second group III-V intrinsic layer.
COPYRIGHT : (C)2011, JPO&INPIT |
客服热线：
手机版
二维码
