| 简介 |
The polycrystalline thin film (B) is made of a composite oxide of a cubic crystal system which has a pyrochlore type crystalline structure of a composition represented as either AZrO or AHfO (A in the formula represents a rare earth element selected from among Y, Yb, Tm, Er, Ho, Dy, Eu, Gd, Sm, Nd, Pr, Ce and La) formed on the film forming surface of the polycrystalline substrate (A), wherein the grain boundary misalignment angle (K) between the same crystal axes of different crystal grains in the polycrystalline thin film (B) along a plane parallel to the film forming surface of the polycrystalline substrate (A) are controlled within 30 DEG . |
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