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METHOD OF FORMING A PRECURSOR SOLUTION FOR METAL ORGANIC DEPOSITION AND MOTHOD OF FORMING A SUPERCON 发明授权

2023-04-16 4600 850K 0

专利信息

申请日期 2025-09-16 申请号 KR1020080019250
公开(公告)号 KR100998310B1 公开(公告)日 2010-11-29
公开国别 KR 申请人省市代码 全国
申请人 SEOUL NATIONAL UNIVERSITY INDUSTRY FOUNDATION; SUNAM CO LTD
简介 A formation method of the precursor solution for the metal organic deposition and a super-conduction thick film forming method using the same are provided to manufacture a super-conduction thick film without the cracking by increasing the viscosity of the precursor solution. A super-conduction thick film forming method using the precursor solution for the metal organic deposition comprises followings. The compound solution is formed by melting the first precursor including one rare earth element without additive, the second precursor including barium and the third precursor including copper in acid(S1). The compound solution is melted in the solvent to form extra precursor solution(S3). The precursor solution with increased viscosity is formed by evaporating the solvent of the extra precursor solution(S4). The precursor solution with an increased viscosity is poured on a base material having texture in order to make the super-conduction thick film. At least one of the first, second or third precursor is molten with the acid not including fluorine. The super-conduction thick film forming process includes to coat the precursor solution with increased viscosity on the base material and to treat with the heat.


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