| 简介 |
PROBLEM TO BE SOLVED : To provide a selective film manufacturing method for easily and selectively forming a film on a substrate without using a CVD method in selectively forming a thin film only on the subject surface section composed of a material such as Si on the substrate surface.
SOLUTION : In a reaction chamber filled with a reactant gas mainly composed of a mixed gas of hydrogen and a rare gas at a pressure of 10-202 kPa (76-1, 520 Torr), a substrate kept at a relatively high temperature and a target kept at a relatively low temperature with a volatile hydride are arranged parallel. By causing electric discharge between the substrate and the target, a thin film formed with the target material is selectively formed on a subject surface section by using a difference between a film deposition rate on the surface section on which the film is to be formed and that on other surface. As the rare gas, He and Ne can be suitably used.
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