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ALUMINUM NITRIDE-BASED COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME AND MEMBER FOR SEMICON 发明申请

2023-08-13 4460 133K 0

专利信息

申请日期 2025-09-10 申请号 JP2009216178
公开(公告)号 JP2010248054A 公开(公告)日 2010-11-04
公开国别 JP 申请人省市代码 全国
申请人 NGK INSULATORS LTD
简介 PROBLEM TO BE SOLVED : To provide a new material which is comparable to alumina in terms of corrosion resistant performance and volume resistivity and is more excellent in heat conductivity than alumina. SOLUTION : An aluminum nitride-based composite material is highly pure with respective content ratios of transition metals, alkali metals and boron as low as 1, 000 ppm or lower, has AlN(aluminum-nitride) and MgO as constitutional phases and additionally contains at least one selected from a group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, an alkali earth metal-aluminum complex oxide, a rare earth metal oxyfluoride, calcium oxide and calcium fluoride, wherein the heat conductivity is in a range of 40 to 150 W/mK, a thermal expansion coefficient is in a range of 7.3 to 8.4 ppm/°C and the volume resistivity is 1×1014 Ωcm or more. COPYRIGHT : (C)2011, JPO&INPIT


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