| 简介 |
PROBLEM TO BE SOLVED : To provide a gate structure for improvement in device performance in a metal oxide film semiconductor field-effect transistor.
SOLUTION : A method of forming a semiconductor device is provided that includes forming a Ge-containing layer atop p-type device regions of the substrate. Thereafter, a first dielectric layer is formed in a second portion of a substrate, and a second dielectric layer is formed overlying the first dielectric layer in the second portion of the substrate and overlying a first portion of the substrate. Gate structures may then be formed atop the p-type device regions and n-type device regions of the substrate, and the gate structures to the n-type device regions include a rare-earth metal.
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