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The crystal film and its manufacturing method, and using the same °faraday rotor 发明授权

2023-03-05 1660 66K 0

专利信息

申请日期 2025-07-19 申请号 JP2005319735
公开(公告)号 JP4572810B2 公开(公告)日 2010-11-04
公开国别 JP 申请人省市代码 全国
申请人 TDK Corporation3067
简介 PROBLEM TO BE SOLVED : To provide a magnetic garnet single crystal film (a Bi substituted rare earth iron garnet single crystal film) hardly generating a crack during growing, cooling or polishing of the film, to provide its manufacturing method and to provide a Faraday rotator which can be manufactured at high yield using the magnetic garnet single crystal film. SOLUTION : In the manufacturing method of the magnetic garnet single crystal film wherein a Bi substituted magnetic garnet single crystal is grown by a liquid phase epitaxial growth method, the lattice constant of the magnetic garnet single crystal is fixed or gradually decreased with growth of the single crystal film and then the lattice constant is increased with the growth of the single crystal film to film-deposit the magnetic garnet single crystal film. COPYRIGHT : (C)2006, JPO&NCIPI


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