| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing semiconductor devices including a new etching method of compound oxide films containing rare earths.
SOLUTION : The method of manufacturing semiconductor devices includes a process for forming the compound oxide film containing rare earths that contains rare-earth elements, metal elements that are not rare earths, and O at an upper portion of semiconductor substrates, and an etching process for alternately performing etching by acid without containing fluorine and etching by a solution containing fluorine for dissolving oxides of other metal elements to the compound oxide film containing rare earths a plurality of times.
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