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Al ALLOY THIN FILM ELECTRODE, LIGHT EMITTER AND SPUTTERING TARGET 发明申请

2023-05-14 1710 191K 0

专利信息

申请日期 2025-09-15 申请号 JP2017163301
公开(公告)号 JP2019039051A 公开(公告)日 2019-03-14
公开国别 JP 申请人省市代码 全国
申请人 KOBELCO KAKEN : KK
简介 PROBLEM TO BE SOLVED : To provide an Al alloy thin film having high productivity and excellent reflection performance; a light emitter including the Al alloy thin film; and a sputtering target for forming the Al alloy thin film. SOLUTION : The Al alloy thin film electrode directly or indirectly laminated on a substrate having a refractive index of 1.5 or more and 2.0 or less has an average film thickness of 50 nm or more and 2000 nm or less and includes a rare earth element. The maximum grain size of an intermetallic compound of the rare earth element existing in a region within a thickness of ±20% using the center of the Al alloy thin film in the thickness direction as a reference is 300 nm or less; the adjacent intermetallic compound exists in a dispersion state at a distance of 2000 nm or less; a reflectance from the substrate and the substrate side of the Al alloy thin film is 60% or more. The rare earth element includes at least one kind selected from Nd, La, Sc and Gd, and the content thereof is preferably 0.1 at% or more and 3 at% or less. SELECTED DRAWING : None COPYRIGHT : (C)2019, JPO&INPIT


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