| 简介 |
PROBLEM TO BE SOLVED : To provide a method and device for manufacturing a graphene structure suited for a semiconductor manufacturing process.
SOLUTION : The method includes : a first step of supplying a first plasma generated from a first gas containing at least hydrogen or one of rare gas to a thin film containing at least one of Co, Ni, Fe carried by a substrate 30; a second step of generating a second plasma containing radical from a second gas containing a hydrocarbon-based gas, and supplying the radical of the second plasma to the thin film through a plane electrode 4 which intercepts penetration of the second plasma other than the radical; and a third step of supplying a third plasma generated from a third gas containing a rare gas to the thin film.
COPYRIGHT : (C)2010, JPO&INPIT |
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