| 简介 |
PROBLEM TO BE SOLVED : To provide a production method, by which a single crystal aluminum nitride plate body having a large area and thickness is formed at high speed.
SOLUTION : The method includes : a preparation step of preparing a raw material comprising aluminum nitride and a compound oxide or a compound nitride oxide containing aluminum and at least one kind of element selected from rare earth elements and alkaline earth metal elements, or a raw material comprising aluminum nitride and a raw material substance (except for aluminum nitride) of a compound oxide or a compound nitride oxide, and disposing an inorganic single crystal substrate 22 having projections 24, 26 formed thereon close to the raw material; and a single crystal aluminum nitride forming step of forming a plate body 28 composed of single crystal aluminum nitride on the projections 24, 26 by heating the raw material and the inorganic single crystal substrate 22 in a non-oxidative atmosphere at 10 to 10, 000 Pa while controlling the temperature of the raw material to 1, 600 to 2, 000°C and the temperature of the inorganic single crystal substrate 22 to 1, 580°C or higher but lower than the temperature of the raw material.
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