| 简介 |
PROBLEM TO BE SOLVED : To provide a non-polar type nonvolatile memory element containing neither rare element nor hazardous element.
SOLUTION : The non-polar type nonvolatile memory element is formed by utilizing the characteristics in which a resistance value changes depending on a change in voltage applied to an oxide film by a single electrode, wherein the oxide film is an oxide film made of aluminum. Preferably, the oxide film is an anodic oxide film. A memory element obtained by anodizing a bulk aluminum plate or an aluminum thin film formed by sputtering or evaporation coating, in a solution of oxalic acid or sulfuric acid, especially exhibits excellent characteristics as a non-polar type.
COPYRIGHT : (C)2010, JPO&INPIT |
客服热线：
手机版
二维码
