| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device having a high-k film/Ge gate stack structure with satisfactory electric properties.
SOLUTION : The semiconductor device a semiconductor region (10) containing Ge as a major component, an insulating film (11) formed on the semiconductor region, and a metallic film (12) formed on the insulating film. The insulating film contains at least one rare earth element (MR), at least one Group IV element (MIV) selected from Ti and Zr, and oxygen.
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