| 简介 |
A condition without using Ar as plasma gas is applied to processing of an organic anti-reflection-coating, which suppresses a spatter effect and decreases the cleavage of C-H and OC-O bonds in a resist. As a result, roughness of the resist after processing the anti-reflection-coating can be suppressed, and pitting and striations after processing a next film to be processed, that is an insulating film, can be prevented. For a rare gas to be used at the time of processing the insulating film, any one of Xe, Kr, a mixed gas of Ar and Xe, and a mixed gas of Ar and Kr is applied in place of Ar, giving rise to reduction in pitting and striations after etching. In addition, a dry etching method with less critical-dimension shift and excellence in both apparatus cost and throughput can be provided by performing resist modification and etching by turns. |
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