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Method of manufacturing transparent conductive film, transparent conductive film and device 发明申请

2023-09-29 2910 115K 0

专利信息

申请日期 2025-06-24 申请号 JP2009036453
公开(公告)号 JP2010192294A 公开(公告)日 2010-09-02
公开国别 JP 申请人省市代码 全国
申请人 TOKYO INST TECH
简介 PROBLEM TO BE SOLVED : To provide : a transparent conductive film mainly made of metal oxide; a method of manufacturing the same; and a device including the same. SOLUTION : The transparent conductive film 16 is obtained by being exposed in gas plasma mainly containing rare gas in a high-frequency field to an amorphous precursor film 14 of the metal oxide containing an added metal element deposited on a base 12, and subjecting it to reforming treatment under reduction conditions. Here, the amorphous precursor film 14, after being exposed to the plasma, is put under an annealing treatment under a reduction atmosphere to perform reforming treatment under reduction conditions. The metal oxide is to be mainly made of titanium, and may be one using niobium as the added metal element. COPYRIGHT : (C)2010, JPO&INPIT


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