| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device wherein some reliability deterioration is controlled that is caused by an interface between a top insulating layer and an element separation insulating layer.SOLUTION : The semiconductor device includes : a semiconductor substrate 11; a laminated structure wherein a tunnel insulating film 12, a charge storage layer 13, a top insulating layer 14, and a control electrode 15 are disposed and laminated in order on the semiconductor substrate; an element separation insulating layer 16 arranged on a lateral side of the laminated structure; and an impurity doping layer 11A formed on both sides of the tunnel insulating film of the semiconductor substrate. The element separation insulating layer consists at least of one of SiO2, SiN, and SiON; the top insulating layer is an oxide containing at least one metal M selected from a group of a rare earth metal, Y, Zr, and Hf, and Si; and respective channel length directional lengths Lcharge, Ltop, and Lgate of the charge storage layer, the top insulating layer, and the control electrode satisfy the formula : Lcharge, Lgate
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