| 简介 |
PROBLEM TO BE SOLVED : To provide a forming method of a silicon oxide film, forming a highly insulating silicon oxide film under a low temperature.
SOLUTION : The forming method of the silicon oxide film includes steps of : forming the silicon oxide film on a substrate W to be treated by supplying a silicon compound gas, an oxidizing gas, and a rare gas into a processing container 32 under the condition that the surface temperature of a holding stage 34 for holding the substrate W is 300°C or below and by generating microwave plasma in the processing container 32; and performing plasma treatment on the silicon oxide film formed on the substrate W by supplying the oxidizing gas and the rare gas into the processing container 32 and by generating microwave plasma in the processing container 32.
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