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SEMICONDUCTOR DEVICES 发明申请

2023-06-06 4370 2196K 0

专利信息

申请日期 2025-07-26 申请号 US12706319
公开(公告)号 US20100213532A1 公开(公告)日 2010-08-26
公开国别 US 申请人省市代码 全国
申请人 KAMATA YOSHIKI; KAMIMUTA YUUICHI
简介 A semiconductor device is provide, which includes a semiconductor region containing Ge as a major component, an insulating film formed on the semiconductor region, and a metallic film formed on the insulating film. At least a portion of the insulating film in contact with the semiconductor region is constituted by an oxide containing at least one rare-earth element MR and at least one Group IV element MIV selected from Ti and Zr.


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