申请日期 | 2025-07-26 | 申请号 | US12706319 |
公开(公告)号 | US20100213532A1 | 公开(公告)日 | 2010-08-26 |
公开国别 | US | 申请人省市代码 | 全国 |
申请人 | KAMATA YOSHIKI; KAMIMUTA YUUICHI | ||
简介 | A semiconductor device is provide, which includes a semiconductor region containing Ge as a major component, an insulating film formed on the semiconductor region, and a metallic film formed on the insulating film. At least a portion of the insulating film in contact with the semiconductor region is constituted by an oxide containing at least one rare-earth element MR and at least one Group IV element MIV selected from Ti and Zr. |
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