| 简介 |
A method for forming a silicon oxide film includes : a step wherein a silicon compound gas, an oxidized gas and a rare gas are supplied into a processing container (32) in a state where the surface temperature of a holding table (34), which holds a substrate to be processed (W), is kept at 300 °C or below, microwave plasma is generated in the processing container (32), and a silicon oxide film is formed on the substrate to be processed (W); and a step wherein the oxidized gas and the rare gas are supplied into the processing container (32), microwave plasma is generated in the processing container (32), and the silicon oxide film formed on the substrate to be processed (W) is processed with plasma. |
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