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MAGNETIC GARNET SINGLE CRYSTAL 发明申请

2023-03-19 3690 99K 0

专利信息

申请日期 2025-07-15 申请号 JP2009022589
公开(公告)号 JP2010180071A 公开(公告)日 2010-08-19
公开国别 JP 申请人省市代码 全国
申请人 FDK CORP
简介 PROBLEM TO BE SOLVED : To provide a method for producing a magnetic garnet single crystal by a liquid-phase epitaxial growth method using a lead-free flux. SOLUTION : The magnetic garnet single crystal is grown by a liquid-phase epitaxial growth method from a melt raw material using Bi2O3-Na2CO3 as a flux, which is represented by the general formula : (RBi)3Fe5-x-y-zInxMyPtzO12, wherein R is one or more elements selected from rare-earth elements (however, Ca may be included additionally), M is one or more elements selected from Ga and Al, and 0


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