| 申请日期 | 2026-03-01 | 申请号 | US11864334 |
| 公开（公告）号 | US7772110B2 | 公开（公告）日 | 2010-08-10 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Rodney L Robison; Douglas Trickett | ||
| 简介 | Embodiments of the invention describe electrical contacts for integrated circuits and methods of forming using gas cluster ion beam (GCIB) processing. The electrical contacts contain a fused metal-containing layer formed by exposing a patterned structure to a gas cluster ion beam containing a transition metal precursor or a rare earth metal precursor. | ||
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