| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor ceramic composition having low ambient temperature resistivity of ≤50 Ω cm and having excellent jump characteristics, in the semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted by Bi-Na and which has a P-type semiconductor in the grain boundary.
SOLUTION : The method for manufacturing the semiconductor ceramic composition includes : preparing BT calcined powder comprising (BaR)TiO3 (where, R is at least one kind in rare earth elements) calcined powder or Ba(TiM)O3 (where, M is at least one kind of Nb, Sb) calcined powder and BNT calcined powder comprising (BiNa)TiO3 calcined powder, separately; mixing the BT calcined powder with the BNT calcined powder to form a compact body from the mixed calcined powder; sintering the compact body in ≤1 vol.% oxygen concentration to form a sintered compact; and heat-treating the sintered compact under a hydrogen-containing atmosphere.
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