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METHOD OF GROWING CARBON NANOTUBE, AND CARBON NANOTUBE BUNDLE-FORMED SUBSTRATE 发明申请

2023-01-30 3740 434K 0

专利信息

申请日期 2025-06-25 申请号 JP2009008437
公开(公告)号 JP2010163331A 公开(公告)日 2010-07-29
公开国别 JP 申请人省市代码 全国
申请人 TOSHIBA CORP; FUJITSU SEMICONDUCTOR LTD
简介 PROBLEM TO BE SOLVED : To provide a method of growing a high-density carbon nanotube by preventing agglomeration of the catalyst fine particles. SOLUTION : The method of growing the high-density carbon nanotube comprises : a first plasma treatment process of treating the surface of a substrate provided with the catalyst fine particles by the plasma species generated from a gas containing at least hydrogen or a rare gas excluding carbon; a second plasma treatment process of forming a carbon layer on the surface of the catalyst fine particles by the plasma generated from a gas containing at least hydrocarbons after the first process; and a carbon nanotube growth process of growing the carbon nanotube by the plasma generated from the gas containing at least hydrocarbons after the second process. COPYRIGHT : (C)2010, JPO&INPIT


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