客服热线:18202992950

THERMOELECTRIC MATERIAL AND METHOD OF MANUFACTURING THE SAME 发明申请

2023-08-16 1450 189K 0

专利信息

申请日期 2025-08-16 申请号 JP2009170555
公开(公告)号 JP2010166016A 公开(公告)日 2010-07-29
公开国别 JP 申请人省市代码 全国
申请人 TOYOTA CENTRAL RES DEV
简介 PROBLEM TO BE SOLVED : To provide a thermoelectric material which allows thermal conductivity of a TiNiSn based compound or a ZrNiSn based compound to be reduced, and suppresses low the content of hetero-phases causing thermoelectric property reduction without using an expensive heavy element (especially Hf), and to provide a method of manufacturing the same. SOLUTION : A thermoelectric material including a half Heusler compound having a composition expressed with formula (1) (Ti1-aAa)1+x(Ni1-bBb)1+y(Sn1-cCc), and its manufacturing method are presented. In the formula (1), a, b, c, x and y are used in the ranges of following inequalities : 0≤a<0.1, 0≤b<0.1, and 0≤c<0.1, -0.1≤x≤0.2 and 0


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4