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The device and method of manufacturing a thin film deposition system 发明授权

2023-08-31 3090 73K 0

专利信息

申请日期 2025-06-24 申请号 JP2009546605
公开(公告)号 JP4503701B2 公开(公告)日 2010-07-14
公开国别 JP 申请人省市代码 全国
申请人 SYNCHRON Inc390007216
简介 [Object] To provide a deposition apparatus 1 capable of suppressing a temporal change in film formation conditions. [Solution] In the deposition apparatus 1 including a substrate holder 12 supported in a vacuum chamber 10 grounded on the earth, a substrate 14 held by the substrate holder 12, deposition sources 34, 36 placed distant from the substrate 14 so as to face the substrate, an ion gun 38 for irradiating ions to the substrate 14, and a neutralizer 40 for irradiating electrons to the substrate 14, an irradiated ion guide member 50 and an irradiated electron guide member 52 are respectively attached to the ion gun 38 and the neutralizer 40.


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