| 申请日期 | 2025-07-07 | 申请号 | US11684757 |
| 公开（公告）号 | US7755136B2 | 公开（公告）日 | 2010-07-13 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Yukie Nishikawa; Akira Takashima; Tatsuo Shimizu | ||
| 简介 | A memory cell in a nonvolatile semiconductor memory device includes a tunneling insulating film, a floating gate electrode made of a Si containing conductive material, an inter-electrode insulating film made of rare-earth oxide, rare-earth nitride or rare-earth oxynitride, a control gate electrode, and a metal silicide film formed between the floating gate electrode and the inter-electrode insulating film. | ||
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