| 简介 |
PROBLEM TO BE SOLVED : To provide a sputtering apparatus in which breakage of an ion gauge is suppressed and discharge can be stably started, and to provide a method for manufacturing a semiconductor device. SOLUTION : The sputtering apparatus includes : a chamber 2; a pipe 7 for vacuum evacuating the chamber; a gas line 13 for introducing a gas; a target 5; a stage table 3 for holding a wafer 4; a power source for applying an electric power to the target; an ampere meter 9 for measuring the current flowing between the target and the stage table; an opening part provided in the chamber; an ion gauge 12a connected to the opening part; a shutter 11b provided so as to shield the opening part; an earth electrically connected to the shutter through a switch 8; and a control mechanism 10 electrically connected to the shutter, the ion gauge and the ampere meter. The control mechanism controls on/off of the switch and also controls the opening and closing operation of the shutter. COPYRIGHT : (C)2010, JPO&INPIT |
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