| 简介 |
PROBLEM TO BE SOLVED : To provide a method to use the plasma CVD method to form a silicon nitride film that can be formed not only on an electroluminescent device, but also on a thermally weak element and has superior barrier properties, and further, to provide a semiconductor device using a silicon nitride film, a display device and a light-emitting display device. ?SOLUTION : Under a method that uses the plasma CVD method for manufacturing a silicon nitride film, silane (SiH4), nitrogen (N2), and a gas such as a rare gas are supplied to the film formation chamber at film formation, when the reaction pressure is equal to or higher than 0.01Torr and equal to or lower than 0.1Torr. ?COPYRIGHT : (C)2005, JPO&NCIPI ? |
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