| 简介 |
PURPOSE : A light emitting diode and a manufacturing method thereof are provided to prevent the crystalline and electrical characteristic of a thin film from decreasing by injecting rare earth element into a first conductive semiconductor layer.CONSTITUTION : Provided is a first substrate. A first conductive semiconductor layer(110), an active layer(120), and a second conductive semiconductor layer(130) are successively formed on the first substrate. The second substrate(200) is welded in the second conductive semiconductor layer. The first substrate is removed so that the first conductive semiconductor layer is exposed. A part of the exposed first conductive semiconductor layer is rough.COPYRIGHT KIPO 2010 |
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