| 简介 |
PURPOSE : A resistance random access memory device including a reactive metal film is provided to improve a high temperature data retention property by having a uniform electrical property in case a dimension is reduced. CONSTITUTION : A resistance random access memory device includes a first electrode(11), a second electrode(17), an oxide film(13), and a reactive metal film(15). The oxide film is positioned between the first electrode and the second electrode. The reactive metal film is positioned between the oxide film and the second electrode. An electronegative degree of the reactive metal film is 1.0~1.5eV. The reactive metal film is a rare earth metal film. |
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