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Yttrium oxide material, member for use in semiconductor manufacturing apparatus, and method for pr 发明授权

2023-03-31 2910 663K 0

专利信息

申请日期 2025-06-24 申请号 US12369106
公开(公告)号 US7744780B2 公开(公告)日 2010-06-29
公开国别 US 申请人省市代码 全国
申请人 Yoshimasa Kobayashi; Yuji Katsuda
简介 A substrate of an electrostatic chuck, which is a member for use in a semiconductor manufacturing apparatus, is formed of an yttrium oxide material that contains yttrium oxide (Y2O3), silicon carbide (SiC), and a compound that contains a rare-earth element (RE), Si, O, and N. The yttrium oxide material contains RE8Si4N4O14 as a compound that contains a rare-earth element (RE), Si, O, and N, wherein RE may be La or Y. Y8Si4N4O14 is produced during a sintering step of a raw material that contains the main component Y2O3 and an accessory component Si3N4. Y8Si4N4O14 and SiC in the yttrium oxide material improve mechanical strength and volume resistivity.


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