| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a thin film transistor having favorable electric characteristics, with high productivity.SOLUTION : A gate electrode is formed over a substrate, and a gate insulating layer is formed over the gate electrode, and a first semiconductor layer having a thickness of 3 to 10 nm, preferably, 3 to 5 nm is formed over the gate insulating layer by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a rare gas of helium, argon, neon, krypton, xenon, or the like. Next, a second semiconductor layer including a plurality of conical projections formed of an amorphous semiconductor and a microcrystal semiconductor formed in such a manner that the first semiconductor layer is partially grown as a seed crystal by generating plasma using a deposition gas containing silicon or germanium, hydrogen, and a gas containing nitrogen. Then, a semiconductor layer to which an impurity element imparting one conduction type is added is formed, and a conductive film is formed, and thus, a thin film transistor is manufactured.COPYRIGHT : (C)2010, JPO&INPIT |
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