| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing a semiconductor device for improving a device property or reliability by improving the quality of an insulation film in the semiconductor device. SOLUTION : A semiconductor memory device has a double layer structure having a third insulation film selected from aluminum oxide or silicon nitride as an inter-poly insulation film between a floating gate electrode and a control gate, and a fourth insulation film selected from a rare earth metal oxide or a group IV-A metal oxide formed on the third insulation film in a non-volatile semiconductor device. COPYRIGHT : (C)2008, JPO&INPIT |
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