| 申请日期 | 2025-09-12 | 申请号 | US12632741 |
| 公开（公告）号 | US20100140755A1 | 公开（公告）日 | 2010-06-10 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Petar Atanackovic | ||
| 简介 | Fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides is disclosed. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors. The presented growth techniques and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices. | ||
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