| 简介 |
PROBLEM TO BE SOLVED : To provide an oxide semiconductor which shows clear p-type conduction.
SOLUTION : A method for manufacturing the oxide semiconductor includes : preparing an indium oxide in which one or more elements selected from alkali metals, alkaline earth metals, rare earth elements, transition metals and nitrogen, or a compound containing one or more of these elements are dissolved and substitute for indium; and heating the indium oxide at a temperature-raising rate of 0.0001-0.1°C/s in a range of 100-250°C to crystallize the indium oxide.
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