| 申请日期 | 2025-06-24 | 申请号 | US12619637 |
| 公开（公告）号 | US20100116315A1 | 公开（公告）日 | 2010-05-13 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Andrew Clark; Robin Smith; Richard Sewell; Scott Semans; F Erdem Arkun; Michael Lebby | ||
| 简介 | The use of rare-earth (RE and O, N, P) based materials to transition between two different semiconductor materials and enable up and/or down conversion of incident radiation is disclosed. Rare earth based oxides, nitrides and phosphides provide a wide range of lattice spacing enabling, compressive, tensile or stress-free lattice matching with Group IV, III-V, and Group II-VI compounds. | ||
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