| 简介 |
PURPOSE : An aluminum nitride-based composite a manufacturing method thereof, and a member of a semiconductor manufacturing apparatus are provided to offer the aluminum nitride-based composite with high thermal conductivity or corrosion resistance.CONSTITUTION : An aluminum nitride-based composite has the content rate of a transition metal, an alkali metal, and boron under 1000ppm, respectively. The composite includes the thermal conductivity of 40~150 W per mK, and the thermal expansion rate of 7.3~8.4ppm per deg C. The aluminum nitride-based composite also contains an aluminum nitride, a magnesium oxide, and one more substance selected from the group consisting of a rare earth metal oxide, a rare earth metal-aluminum complex oxide, and others. A manufacturing method of the aluminum nitride-based composite comprises a step of sintering a mixture containing 49.8~69.4vol%% of aluminum nitride, 20.2~40vol%% of magnesium oxide, and 0.5~30vol%% of rare earth metal oxide using a hot press.COPYRIGHT KIPO 2010 |
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