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METHOD FOR THE PRODUCTION OF POLYCRYSTALLINE SILICON 发明申请

2023-02-13 2950 820K 0

专利信息

申请日期 2026-04-24 申请号 CA2741023
公开(公告)号 CA2741023A1 公开(公告)日 2010-04-29
公开国别 CA 申请人省市代码 全国
申请人 SUNLIT S R L
简介 The process for the production of polycrystalline silicon starting from metallurgical silicon, milled up to a predetermined granulom-etry, implies the reaction of metallurgical silicon with anhydrous hydrogen fluoride (HF), to obtain silicon tetrafluoride (SiF4), and to operate the syn-thesis of monosilane (SiH4) by a reaction of hydrogenation of the silicon tetrafluoride (SiF4) with alkaline or alkaline earth metals halide in fluid medium of organic solvent or melt salts. Then a thermal decomposition of said monosilane (SiH4) in a boiling-pseudo fluidized bed reactor is carried out, to obtain high purity granulated polycrystalline silicon.


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