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METHOD OF MANUFACTURING SILICON NITRIDE WEAR RESISTANT MEMBER 发明申请

2023-07-23 1440 163K 0

专利信息

申请日期 2025-07-02 申请号 JP2010004291
公开(公告)号 JP2010090029A 公开(公告)日 2010-04-22
公开国别 JP 申请人省市代码 全国
申请人 TOSHIBA CORP
简介 PROBLEM TO BE SOLVED : To provide a method of manufacturing a silicon nitride wear resistant member which has a predetermined electric resistance value (conductivity) in addition to high strength-high toughness characteristics of original silicon nitride and is excellent in especially sliding characteristics. SOLUTION : The method of manufacturing a silicon nitride wear resistant member is characterized as follows. A raw material mixed object, in which 12-28 mass% of silicon carbide, 3-15 mass% in terms of a silicide of at least one kind selected from the group consisting of carbides of Mo, W, Ta, and Nb, 2-10 mass% in terms of an oxide of a rare earth element, 2-10 mass% in terms of an oxide of aluminum, and 5 mass% or less in terms of an oxide of at least one kind selected from the group consisting of Ti, Hf, and Zr are added to a silicon nitride powder having 1.0 μm or less of an average particle diameter and including 1.7 mass% or less of oxygen and 90 mass% or more of α phase type silicon nitride, is molded to make a molded body, the obtained molded body is degreased, thereafter is sintered at a temperature of 1, 650-1, 850°C under a nonoxidizing atmosphere, and thereby the carbide turns into a silicide. COPYRIGHT : (C)2010, JPO&INPIT


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