| 简介 |
PROBLEM TO BE SOLVED : To provide a display of low cost and high picture quality, in which a stagger type polycrystal Si-TFT structure with good characteristic is compatible with a low resistance wiring structure which is advantageous to a larger display.
SOLUTION : A TFT driving a plurality of pixels arranged in matrix is configured as a stagger type polycrystal Si-TFT. An electrode wiring 2 positioned at a layer lower than a polycrystal Si layer 4 which forms a channel of the TFT has a lamination structure including the first alloy layer 2a consisting of an Al alloy containing rare earth element as an additive element and the second alloy layer 2b which is made of an alloy of rare earth element, high melting-point metal, and Al and is positioned at a layer higher than the first layer. Thus, a low resistance wiring configuration is provided which resists a high temperature at the time of forming polycrystal Si.
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