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PHOTOSENSOR AND METHOD FOR MANUFACTURING THE PHOTOSENSOR 发明申请

2023-04-19 2880 687K 0

专利信息

申请日期 2025-09-12 申请号 WOJP09067046
公开(公告)号 WO2010038785A1 公开(公告)日 2010-04-08
公开国别 WO 申请人省市代码 全国
申请人 NATIONAL UNIVERSITY CORPORATION OKAYAMA UNIVERSITY; IKEDA Naoshi; KUBOZONO Yoshihiro; KAMBE Takashi
简介 Disclosed is a photosensor having excellent response to long-wavelength light.? Also disclosed is a method for manufacturing the photosensor. The photosensor comprises an electrical conductivity variable material which causes a change in electrical conductivity upon receipt of light, first and second electrodes provided on a light receiving surface of the electrical conductivity variable material, and a current detecting means which detects current generated between the first electrode and the second electrode.? The electrical conductivity variable material is formed of a compound having a layered triangle lattice structure containing a rare earth element.? The compound has a layered triangle lattice structure represented by (RMbO3-δ)n(MaO)m wherein R represents at least one element selected from In, Sc, Y, Dy, Ho, Er, Tm, Yb, Lu, Ti, Ca, Sr, Ce, Sn, and Hf; Ma and Mb independently represent at least one element selected from Ti, Mn, Fe, Co, Cu, Ga, Zn, Al, Mg, and Cd; n is an integer of 1 or more; m is an integer of 0 or more; and δ is a real number of 0 to 0.2.? In the compound, one or some of R’s may be replaced by a positive divalent or lower element.


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