| 简介 |
Disclosed is a memory element having low-power consumption. Also disclosed are a method for manufacturing the memory element and a memory device comprising the memory element. The memory element comprises a resistor that causes a change in electric resistance upon the application of voltage and a voltage applying electrode for applying a predetermined voltage to the resistor. The memory device comprises the memory element. The resistor is formed of a compound having a layered triangle lattice structure containing a rare earth element. In particular, the resistor is formed of a compound having a layered triangle lattice structure represented by (RMbO3-δ)n(MaO)m wherein R represents at least one element selected from In, Sc, Y, Dy, Ho, Er, Tm, Yb, Lu, Ti, Ca, Sr, Ce, Sn, and Hf; Ma and Mb, which may be same or different, represent at least one element selected from Ti, Mn, Fe, Co, Cu, Ga, Zn, Al, Mg, and Cd; n is an integer of 1 or more; m is an integer of 0 or more; and δ is a real number of 0 to 0.2. Alternatively, the resistor may be formed of a compound that is the same compound as described above except that a part of R in the compound has been replaced with a positive divalent or lower element. |
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