| 申请日期 | 2025-06-28 | 申请号 | US12414152 |
| 公开（公告）号 | US20100078601A1 | 公开（公告）日 | 2010-04-01 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Venkateswara R PALLEM; Benjamin J Feist; Nathan Stafford; Christian Dussarrat | ||
| 简介 | Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. In certain embodiments, the disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent. | ||
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