| 简介 |
This invention provides a photoelectric conversion apparatus, which can realize a stably high photoelectric conversion efficiency using a transparent electrode having an optimized relationship between electrical resistivity and transmittance, and a method for manufacturing the same. At least one of transparent electrodes (12, 16) is formed of a Ga-free ZnO layer or a Ga-added ZnO layer. The content of Ga in the ZnO layer is not more than 5 atomic%% based on Zn in the ZnO layer. The ZnO layer is formed by a sputtering method using an oxygen-containing rare gas as a sputtering gas. The content of oxygen in the sputtering gas is not less than 0.1%% by volume and not more than 5%% by volume based on the total volume of the oxygen and rare gas.COPYRIGHT KIPO & WIPO 2010 |
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