| 简介 |
PROBLEM TO BE SOLVED : To provide a garnet single crystal substrate in which a large Faraday effect is obtained and a large amount of bismuth can be dissolved in a solid of a bismuth-substituted rare earth iron garnet single crystal thick film having superior crystallinity, and to provide a method for manufacturing the substrate.
SOLUTION : The garnet single crystal is grown by Czochralski method by using a mixture prepared by mixing an oxide of samarium, an oxide of scandium and an oxide of gallium in an atomic ratio of Sm : Sc : Ga=3 : p : q, wherein p and q satisfy 0≤p≤2.0 and 3.0≤q≤5.0, in a mixture gas atmosphere of an inert gas containing oxygen by 0.5-3.0% on a volume basis. The purity of the raw material used for the crystal growth is preferably not less than 99.9%. The garnet single crystal is used as a substrate for forming a bismuth-substituted rare earth iron garnet single crystal film by liquid phase epitaxy.
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