| 简介 |
PROBLEM TO BE SOLVED : To provide a method of manufacturing an electronic device (high-performance MOS type semiconductor device, for example) structure having favorable electrical characteristics using an SiO2 film and an SiON film as an insulation film having an extremely thin film thickness and using polysilicon, amorphous silicon, and SiGe as an electrode.
SOLUTION : Under a processing gas including oxygen and rare gases, by radiating microwaves through a flat antenna member SPA on a wafer W, plasma containing oxygen and rare gases (or, plasma containing nitrogen and rare gases, or plasma containing nitrogen, rare gases, and hydrogen) is generated. Using the plasma, an oxidation film 2 (or oxynitride film 2a) is formed on the surface of the wafer, an electrode 13 of polysilicon or the like is formed to build an electronic device structure.
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